6 February 1997 Reversible phase-change optical recording on SiO2-(Co+ Si)-SiO2-Si multilayer structure
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Proceedings Volume 2968, Optical Organic and Semiconductor Inorganic Materials; (1997) https://doi.org/10.1117/12.266822
Event: International Conference on Advanced Optical Materials and Devices, 1996, Riga, Latvia
The optical properties of SiO2-(Co plus Si)-SiO2-Si structures studied by treatment with Q-switched YAG:Nd and carbon dioxide lasers are presented. The photo-thermo- chemical reaction of Co with Si has a threshold character. No change in optical properties of (Co plus Si) mixture was observed up to 2 MW/cm2 intensities of carbon dioxide laser radiation. A decrease of the reflection coefficient R from 70% to 45% is observed as the intensity is increased up to 8 MW/cm2. When this multilayer structure is subject to Q-switched YAG:Nd laser radiation of the intensity from 14 MW/cm2 to 53 MW/cm2, the magnitude of the reflection coefficient returns to its initial value 70%. It means that information recorded by carbon dioxide laser is erased. Calculations of the temperature field during irradiation with carbon dioxide and YAG:Nd laser showed that the phase transition from mixture (Co plus Si) to CoSi2 caused by carbon dioxide laser irradiation results in recording of information, whereas the thermal impact caused by YAG:Nd laser irradiation results in amorphization of CoSi2 and erasing of information.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Arthur Medvids, Maris Knite, J. Kaupuzs, V. Frishfelds, "Reversible phase-change optical recording on SiO2-(Co+ Si)-SiO2-Si multilayer structure", Proc. SPIE 2968, Optical Organic and Semiconductor Inorganic Materials, (6 February 1997); doi: 10.1117/12.266822; https://doi.org/10.1117/12.266822

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