6 February 1997 Thermal stable laser-produced low-ohmic contact to nanometer p-GaAs layers of barrier structures for fast optoelectronic devices
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Proceedings Volume 2968, Optical Organic and Semiconductor Inorganic Materials; (1997); doi: 10.1117/12.266824
Event: International Conference on Advanced Optical Materials and Devices, 1996, Riga, Latvia
Abstract
Nonalloyed W-Zn compound based ohmic contact to p-type GaAs were obtained by vacuum pulse YAG-laser deposition of W/Zn/W/GaAs structure and by laser stimulated impurity Zn diffusion for forming of the submicron contact structure. Pulse laser modification processes were controlled by the pyrodetector system. High level of impurity concentration NZn allowed to form the p+-p GaAs layers. The W layers provided the drastic boundaries of contact layers and its thermal stability. The typical Rc value of 2.10-5 (Omega) .cm2 obtained for the W/Zn/W/GaAs remained stable after 400 degrees Celsius annealing and after 150 ma current testing during 100 hours.
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S. V. Baranetz, S. P. Dikiy, Leonid L. Fedorenko, E. B. Kaganovich, Sergey V. Svechnikov, V. A. Antonov, "Thermal stable laser-produced low-ohmic contact to nanometer p-GaAs layers of barrier structures for fast optoelectronic devices", Proc. SPIE 2968, Optical Organic and Semiconductor Inorganic Materials, (6 February 1997); doi: 10.1117/12.266824; https://doi.org/10.1117/12.266824
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KEYWORDS
Zinc

Gallium arsenide

Resistance

Annealing

Pulsed laser operation

Diffusion

Gold

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