27 December 1996 High-photosensitive optical information carriers based on the avalanche phenomena of charge carrier in amorphous semiconductor
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Proceedings Volume 2969, Second International Conference on Optical Information Processing; (1996) https://doi.org/10.1117/12.262603
Event: Second International Conference on Optical Information Processing, 1996, St. Petersburg, Russian Federation
Abstract
For amorphous analog of trigonal selenium, a avalanche phenomena in strong electric field is investigated. It is shown, that it is perspective for supersensitive optical information carriers and it is problematic for xerographical photoreceptors.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuri A. Cherkasov, N. B. Zakharova, Elena Lvovna Alexandrova, "High-photosensitive optical information carriers based on the avalanche phenomena of charge carrier in amorphous semiconductor", Proc. SPIE 2969, Second International Conference on Optical Information Processing, (27 December 1996); doi: 10.1117/12.262603; https://doi.org/10.1117/12.262603
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