27 December 1996 Novel polarization sensitive optoelectronic switching device for optical information processing
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Proceedings Volume 2969, Second International Conference on Optical Information Processing; (1996); doi: 10.1117/12.262557
Event: Second International Conference on Optical Information Processing, 1996, St. Petersburg, Russian Federation
Abstract
An array compatible, fast and high contrast opto-electronic polarization sensitive switch is proposed. The element's electrical configuration is a standard p-i-n heterostructure under reverse bias voltage. Its optical configuration is very similar to an asymmetric Fabry-Perot resonator (AFPR) where an electroabsorptive i-layer is included between the p and n layers, as in a SEED. Both p- and n-layers are Bragg- reflectors. The front mirror of the AFPR is made slightly polarization dependent using a subwavelength grating etched in the top layer of the p-type reflector stack. We calculate the polarization dependent overall absorption and reflection of the device and model the steady state behavior and polarization induced switching properties, for an electroabsorption coefficient that increases linearly with applied voltage. Using a standard load-line analysis we show that changing the input polarization from TE to TM can lead to a dramatic decrease or increase in overall reflectivity.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Boris S. Ryvkin, Jan Danckaert, Christel Van de Poel, Michael Peeters, Hugo Thienpont, Irina P. Veretennicoff, Bart Dhoedt, Roel G. Baets, "Novel polarization sensitive optoelectronic switching device for optical information processing", Proc. SPIE 2969, Second International Conference on Optical Information Processing, (27 December 1996); doi: 10.1117/12.262557; https://doi.org/10.1117/12.262557
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KEYWORDS
Polarization

Switching

Mirrors

Reflectivity

Optoelectronics

Power supplies

Fabry–Perot interferometers

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