Planar waveguides in YLF grown by liquid phase epitaxy

Peter Rogin; Jurg Hulliger

doi:10.1117/12.270008

31 March 1997 Planar waveguides in YLF grown by liquid phase epitaxy

Peter Rogin, Jurg Hulliger

Proceedings Volume 2986, Solid State Lasers VI; (1997) https://doi.org/10.1117/12.270008
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Liquid phase epitaxy (LPE) was used to grow LiY_1-x-yLn_xGd_yF₄ waveguides on LiYF₄ (YLF) substrates. Gadolinium co-doping increased the difference in the refractive index of the layer and the substrate materials. Buried waveguides were obtained by growing an YLF cladding layer on top of either planar or linear waveguides. Mechanical processing allowed to fabricate a ridge-type waveguide. Laser operation was achieved for a buried LiY_0.89Nd_0.01Gd_0.1F₄ ridge waveguide end-pumped with a laser diode operating at 806.5 nm. In the case of buried LiY_0.89Er_0.01Gd_0.1F₄ layers strong upconversion luminescence was observed in low optical loss waveguides.

Citation Download Citation

Peter Rogin and Jurg Hulliger "Planar waveguides in YLF grown by liquid phase epitaxy", Proc. SPIE 2986, Solid State Lasers VI, (31 March 1997); https://doi.org/10.1117/12.270008

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