Paper
9 May 1997 Formation of Ti:sapphire thin films on single-crystal sapphire and GaAs substrates by pulsed laser deposition
Peter A. Atanasov, Rumen I. Tomov, Zahari Y. Peshev, Anna O. Dikovska, Vassilka N. Tzaneva
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Abstract
The results of pulsed laser deposition of Ti-doped and undoped sapphire ((alpha) -Al2O3) thin films are presented. Three types of doped targets are utilized -- monocrystalline and two different ceramics synthesized in vacuum and H2 ambient, respectively. The doping procedure is related with the potential application of the Ti:sapphire thin films as planar tunable laser media. The influence of the target's type upon the film quality is studied. The films are characterized by XRD, RHEED, and SEM analyses. The optical emission measurements of the laser induced plasma plume are performed.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter A. Atanasov, Rumen I. Tomov, Zahari Y. Peshev, Anna O. Dikovska, and Vassilka N. Tzaneva "Formation of Ti:sapphire thin films on single-crystal sapphire and GaAs substrates by pulsed laser deposition", Proc. SPIE 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II, (9 May 1997); https://doi.org/10.1117/12.273735
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Cited by 2 scholarly publications.
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KEYWORDS
Thin films

Ceramics

Sapphire

Gallium arsenide

Pulsed laser deposition

Scanning electron microscopy

Plasma

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