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9 May 1997 Growth of Si1-yCy/Si and Si1-x-yGexCy/Si heterostructures by ion implantation and pulsed excimer laser-induced epitaxy
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Abstract
In this work, Si1-yCy and Si1-x-yGexCy alloy layers were grown by multiple energy ion implantation of Ge and C into single crystal Si followed by pulsed excimer laser induced epitaxy. The properties of the alloy layers obtained by this technique, in terms of film crystallinity, Ge and C redistribution an substitutional incorporation, strain formation and relaxation, SiC precipitation, were demonstrated to depend strongly both on ion implantation and laser processing conditions. The growing of pseudomorphic epitaxial layers, from group IV semiconductor alloys, using the very high energy and large area beam (up to 1 J/cm2 per pulse over 40 cm2) excimer laser developed by SOPRA, for mass production is reported for the first time.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric Fogarassy, Adriana Grob, Jean-Jacques Grob, Dominique Muller, Bernard Prevot, Roland Stuck, Salome de Unamuno, Pierre Boher, and Marc X. Stehle "Growth of Si1-yCy/Si and Si1-x-yGexCy/Si heterostructures by ion implantation and pulsed excimer laser-induced epitaxy", Proc. SPIE 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II, (9 May 1997); https://doi.org/10.1117/12.273728
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