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9 May 1997 In-situ photoluminescence mapping of industrial IR-sensitive film structures
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Abstract
The purpose of the work is to investigate a photoluminescence of GaAs-photocathodes at various stages of manufacturing depending on illumination method and spectral range of radiation, but also to obtain 2-dimensional spatial distributions of a photoluminescence intensity, to compare them with reference and to detect features of indicated distributions. Besides with the purpose of detection and extraction such typical defects as internal cracks, pile-up of dislocations and swirl-defects some algorithms of the obtained images processing were developed and tentatively tested.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey C. Stafeev and Michael S. Kosyakov "In-situ photoluminescence mapping of industrial IR-sensitive film structures", Proc. SPIE 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II, (9 May 1997); https://doi.org/10.1117/12.273720
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