Photochemical reactions in silicon nitride with ArF excimer laser

Kou Kurosawa; Peter R. Herman; Yasuo Takigawa; Akihiro Kameyama; Atsushi Yokotani; Wataru Sasaki

doi:10.1117/12.273742

9 May 1997 Photochemical reactions in silicon nitride with ArF excimer laser

Kou Kurosawa, Peter R. Herman, Yasuo Takigawa, Akihiro Kameyama, Atsushi Yokotani, Wataru Sasaki

Proceedings Volume 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II; (1997) https://doi.org/10.1117/12.273742
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Exposure of silicon nitride to above-bandgap 6.5-eV photons from an ArF excimer laser drives both the dissociation of silicon-nitrogen bonds and the desorption of nitrogen atoms and/or molecules over a wide fluence range. Crystalline silicon precipitates are also generated on laser exposed surfaces, however, only for fluences exceeding 0.2 J/cm². The rates of nitrogen desorption and the concentration of silicon precipitation were found to depend strongly on laser fluence, rising rapidly above 0.2 J/cm², and saturating at approximately 0.5 J/cm². This saturation was also observed in the thickness of the silicon precipitate layer, which peaked at 35 nm depth for fluences greater than 0.5 J/cm². Such saturation phenomena can be explained by the onset of laser ablation at approximately 0.5 J/cm² fluence which removes material in the laser affected zone. The formation of silicon precipitates is discussed in the context of photochemical reactions that follow band-to-band electronic transitions.

Citation Download Citation

Kou Kurosawa, Peter R. Herman, Yasuo Takigawa, Akihiro Kameyama, Atsushi Yokotani, and Wataru Sasaki "Photochemical reactions in silicon nitride with ArF excimer laser", Proc. SPIE 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II, (9 May 1997); https://doi.org/10.1117/12.273742

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