9 May 1997 Pulsed laser deposition of ferroelectric thin films for active microwave electronic devices
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High quality thin films of SrxBa(1-x)TiO3 are currently being grown using pulsed laser deposition (PLD). These films are being used for the construction of frequency tunable microwave electronic devices. In particular, a low phase noise, voltage controlled oscillator (1.5 - 2.5 GHz) is currently being developed. Single phase and oriented SrxBa(1-x)TiO3 films have been deposited by PLD onto (100) LaAlO3 and MgO and single crystal Ag films. The dielectric properties of these films has been measured at 1 MHz and between 1 and 20 GHz. A 75% change in the capacitance can be achieved using a 40 V bias across a 5 micrometer interdigital capacitor gap (80 kV/cm). The dissipation factor (measured at 1 MHz) depends on film composition and temperature. Dielectric loss measurement at 1 - 20 GHz have shown a dielectric loss tangent as small as 1.25 multiplied by 10-2.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James S. Horwitz, James S. Horwitz, Douglas B. Chrisey, Douglas B. Chrisey, A. C. Carter, A. C. Carter, Wontae Chang, Wontae Chang, Lee A. Knauss, Lee A. Knauss, Jeffrey M. Pond, Jeffrey M. Pond, Steven W. Kirchoefer, Steven W. Kirchoefer, D. Korn, D. Korn, Syen B. Qadri, Syen B. Qadri, } "Pulsed laser deposition of ferroelectric thin films for active microwave electronic devices", Proc. SPIE 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II, (9 May 1997); doi: 10.1117/12.273731; https://doi.org/10.1117/12.273731

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