9 May 1997 Si photoepitaxy induced by synchrotron radiation
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Abstract
Epitaxial Si films are grown on Si substrates by synchrotron radiation-excited gas-source molecular beam epitaxy (MBE) using disilane. It is demonstrated that the epitaxial temperature is lowered to 40 degrees Celsius. Selective epitaxial growth between Si/SiO2 substrate can be achieved irrespective of growth time at temperatures above 700 degrees Celsius. For the B doping using disilane/decaborane, it is confirmed that SR irradiation significantly decreases the doping temperatue (80 degrees Celsius) and electrical activation rate.
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Yuichi Utsumi, Yuichi Utsumi, "Si photoepitaxy induced by synchrotron radiation", Proc. SPIE 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II, (9 May 1997); doi: 10.1117/12.273714; https://doi.org/10.1117/12.273714
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