9 May 1997 Si photoepitaxy induced by synchrotron radiation
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Epitaxial Si films are grown on Si substrates by synchrotron radiation-excited gas-source molecular beam epitaxy (MBE) using disilane. It is demonstrated that the epitaxial temperature is lowered to 40 degrees Celsius. Selective epitaxial growth between Si/SiO2 substrate can be achieved irrespective of growth time at temperatures above 700 degrees Celsius. For the B doping using disilane/decaborane, it is confirmed that SR irradiation significantly decreases the doping temperatue (80 degrees Celsius) and electrical activation rate.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuichi Utsumi, Yuichi Utsumi, "Si photoepitaxy induced by synchrotron radiation", Proc. SPIE 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II, (9 May 1997); doi: 10.1117/12.273714; https://doi.org/10.1117/12.273714

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