Optical characterization of binary, tertiary, and quaternary II-VI semiconductor thin films prepared by pulsed excimer laser deposition

Lowell R. Matthews; Robert L. Parkhill; Edward T. Knobbe

doi:10.1117/12.270084

31 March 1997 Optical characterization of binary, tertiary, and quaternary II-VI semiconductor thin films prepared by pulsed excimer laser deposition

Lowell R. Matthews, Robert L. Parkhill, Edward T. Knobbe

Author Affiliations +

Proceedings Volume 2992, Excimer Lasers, Optics, and Applications; (1997) https://doi.org/10.1117/12.270084
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Pulsed lasers are becoming a popular tool for the deposition of coatings and active layers. A series of thin films composed of binary, tertiary, and quaternary II-VI semiconductors was coated onto silica substrates by the pulsed laser deposition technique, using a xenon chloride excimer laser. The semiconductor films produced by this technique included both films made from a single semiconductor target already containing the desired final stoichiometry and films made by depositing alternating layers from targets of different semiconductor compositions. The optical behaviors of the resultant films were characterized by absorption spectroscopy.

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Lowell R. Matthews, Robert L. Parkhill, and Edward T. Knobbe "Optical characterization of binary, tertiary, and quaternary II-VI semiconductor thin films prepared by pulsed excimer laser deposition", Proc. SPIE 2992, Excimer Lasers, Optics, and Applications, (31 March 1997); https://doi.org/10.1117/12.270084

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