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31 March 1997 Photopolymers designed for high-resolution laser ablation at a specific irradiation wavelength
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We have developed novel photopolymers based on the triazeno chromophore group. The absorption properties can be tailored for a specific irradiation wavelength. With the introduction of a photolabile group into the main chain of the polymer we expected a mechanisms which is mainly photochemical. This should result in high resolution etching with no thermal damage or chemical/physical modification to the material. The gaseous products of the photochemical decomposition were thought to assist the material removal, and to prevent the re-deposition of solid products which would contaminate the surface. We confirmed that the irradiation of the polymer at 308 nm resulted in high resolution etching. No debris has been found around the etched corners. Maximum ablation rates of about 3 (Mu) m/pulse were achieved due to the dynamic absorption behavior. No physical or chemical modifications of the polymer surface could be detected after irradiation at the tailored absorption wavelength, whereas irradiation at different wavelengths resulted in modified surfaces. The etching mechanism can be described as a laser induced microexplosion, revealed by ns-imaging. The etching of the polymer starts and ends with the laser pulse, shown by ns- interferometry, confirming that the acting mechanism is mainly photochemical at high fluences for our polymers, which can be used as high resolution laser dry etching resists.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas K. Lippert, L. S. Bennett, Thilo Kunz, Christina Hahn, Alexander J. Wokaun, H. Furutani, H. Fukumura, Hiroshi M. Masuhara, T. Nakamura, and Akira Yabe "Photopolymers designed for high-resolution laser ablation at a specific irradiation wavelength", Proc. SPIE 2992, Excimer Lasers, Optics, and Applications, (31 March 1997);

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