6 June 1997 (BAlGa)N quaternary system and epitaxial growth on (0001)6H-SiC substrate by low-pressure MO-VPE
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Abstract
GaN and their alloy systems have a potential for the application of optical devices operating in blue and ultraviolet spectral region. In this paper, the possibility of (BAlGa)N quaternary system lattice matched to (0001) 6H- SiC substrate is described for ultraviolet emitters in the view of bandgap energy, lattice-matching to substrates. The estimated bandgap energy of quaternary system is ranging from 3.9 eV to 6.1 eV. It is also discussed that the crystal growth of (BAlGa)N systems using metalorganic vapor phase epitaxy. The quaternary system lattice-matched to (0001) 6H- SiC have an advantage for the laser application operating in ultraviolet spectral region.
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Hideo Kawanishi, Hideo Kawanishi, Makiko Haruyama, Makiko Haruyama, Toshi Shirai, Toshi Shirai, Yasuharu Suematsu, Yasuharu Suematsu, } "(BAlGa)N quaternary system and epitaxial growth on (0001)6H-SiC substrate by low-pressure MO-VPE", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275585; https://doi.org/10.1117/12.275585
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