6 June 1997 Characterization and modeling of InGaAs/GaAs multiple quantum well lasers by capacitance-voltage measurements
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Abstract
We have measured and analyzed the room-temperature capacitance-voltage (C-V) characteristics of In0.35Ga0.65As/GaAs MQW laser structures with different doping levels in the active region. Average doping densities in the well-barrier regions were directly extracted from the as- measured carrier profiles. A model for he C-V measurement, including the self-consistent solution of Poisson and Schroedinger equations, was developed. The carrier profiles obtained from the simulated C-V characteristics do not correspond to the free carrier profiles since the local charge neutrality hypothesis does not hold for QW structures. Thus, the true carrier distribution can only be determined from a full quantum-mechanical simulation of the laser structure. We have determined, form the comparison between experimental and simulated profiles, a conduction band offset (Delta) Ec/(Delta) Eg of 0.81. We have also applied C-V measurements to samples with interdiffused QWs, and obtained the characteristic interdiffusion length.
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Julia Arias, Ignacio Esquivias, Susann Buerkner, Pierre Chazan, John D. Ralston, Eric C. Larkins, Michael Mikulla, S. Weisser, Josef Rosenzweig, "Characterization and modeling of InGaAs/GaAs multiple quantum well lasers by capacitance-voltage measurements", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275603; https://doi.org/10.1117/12.275603
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