6 June 1997 Detection of lateral composition modulation in an (InAs)n/(GaAs)n short-period superlattice on InP by magnetoexciton spectroscopy
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Abstract
An experimental signature for detecting spontaneous lateral composition modulation in a (InAs)n/(GaAs)n short period superlattice on a InP substrate based on magnetoexciton spectroscopy is presented. We find by aligning the magnetic field in three crystallographic directions, one parallel to and the other two perpendicular to the composition modulation direction, that the magnetoexciton shifts are anisotropic and are a good indicator for the present of composition modulation.
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Eric D. Jones, Eric D. Jones, Joanna Mirecki-Millunchick, Joanna Mirecki-Millunchick, David M. Follstaedt, David M. Follstaedt, Michael J. Hafich, Michael J. Hafich, Seok-Won Lee, Seok-Won Lee, John L. Reno, John L. Reno, Ray D. Twesten, Ray D. Twesten, Yongliang Zhang, Yongliang Zhang, Angelo J. Mascarenhas, Angelo J. Mascarenhas, } "Detection of lateral composition modulation in an (InAs)n/(GaAs)n short-period superlattice on InP by magnetoexciton spectroscopy", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275597; https://doi.org/10.1117/12.275597
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