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6 June 1997 Doppler-shifted self-reflected wave from a semiconductor
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Abstract
We report the first experimental observation of a self- reflected wave inside a very dense saturable absorber. An intense femtosecond pulse saturates the absorption and causes a density front moving into the semiconductor sample. Due to the motion of the boundary between saturated and unsaturated areas of the sample the light reflected at this boundary is red-shifted by the Doppler effect. The spectrally shifted reflection makes it possible to distinguish between surface reflection and self-reflection and is used to proof the concept of the dynamic nonlinear skin effect experimentally. Quite well agreement with model calculations is found.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alex Schuelzgen, S. Hughes, and Nasser Peyghambarian "Doppler-shifted self-reflected wave from a semiconductor", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275588
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