Effect of strain on the Auger recombination processes in type-II heterostructures with QWs

Aleksey D. Andreev; Georgy G. Zegrya

doi:10.1117/12.275629

6 June 1997 Effect of strain on the Auger recombination processes in type-II heterostructures with QWs

Aleksey D. Andreev, Georgy G. Zegrya

Proceedings Volume 2994, Physics and Simulation of Optoelectronic Devices V; (1997) https://doi.org/10.1117/12.275629
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Auger recombination processes in type II heterostructures with strained quantum wells (QW) have been studied theoretically. It is shown that in type II QW there are two channels of electron and hole recombination. During the Auger recombination processes these two channels interfere destructively, which results in decrease of the Auger matrix element and the AR rate. During radiative recombination process one of these recombination channels is the dominant. It is shown that the Auger recombination rate essentially depends on strain. It is demonstrated that under certain conditions the Auger recombination rate can be suppressed by choosing the optimal value of strain.

Citation Download Citation

Aleksey D. Andreev and Georgy G. Zegrya "Effect of strain on the Auger recombination processes in type-II heterostructures with QWs", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275629

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