6 June 1997 Epitaxial growth and properties of cubic group III-nitride layers
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Single-phase cubic GaN and InN layers are grown by plasma assisted MBE. The temperature-dependence of the surface reconstruction is elaborated. The structural stability of the cubic growth in dependence of the growth stoichiometry is studied by RHEED measurements and numerical simulations of the experimental RHEED patterns. Growth oscillations on cubic GaN and during the growth of GaN-InN single quantum wells are recorded at nearly stoichiometric adatom coverage. Photoluminescence reveals the dominant optical transitions of cubic GaN and InN. Using in-situ RHEED to control the surface stoichiometry it is possible to grow N-stabilized layers resulting in intrinsic p-type GaN epilayers with hole concentrations of about p equals 1 X 1013 cm-3 and mobilities of about (mu) p equals 320 cm2/Vs, respectively.
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D. Schikora, D. Schikora, B. Schoettger, B. Schoettger, Donat Josef As, Donat Josef As, K. Lischka, K. Lischka, "Epitaxial growth and properties of cubic group III-nitride layers", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275596; https://doi.org/10.1117/12.275596

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