6 June 1997 Hot carrier effects in conventional injection and tunneling injection quantum well laser diodes
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Abstract
The Minilase-II quantum well laser simulator is briefly described. Simulated modulation responses are then compared to experimental data, showing a good agreement between simulation and measurement. The simulator is also shown to distinguish between effects intrinsic to a quantum well laser and those due to external circuitry and device packaging. Next, Minilase-II is used to demonstrate the highly nonlinear effects of quantum carrier heating, including significant increases in low frequency roll off and differential gain suppressio. Finally, the simulator is used in a preliminary analysis of tunneling injection lasers. The analysis shows that tunneling injection results in less quantum carrier heating. However, the analysis also shows a decrease in the net injection of carriers into the quantum well, which offsets the decreased heating and leads to a a reduction in modulation bandwidth.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Matthew E. Grupen, Karl Hess, "Hot carrier effects in conventional injection and tunneling injection quantum well laser diodes", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275598; https://doi.org/10.1117/12.275598
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