6 June 1997 Hot carrier effects in conventional injection and tunneling injection quantum well laser diodes
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Abstract
The Minilase-II quantum well laser simulator is briefly described. Simulated modulation responses are then compared to experimental data, showing a good agreement between simulation and measurement. The simulator is also shown to distinguish between effects intrinsic to a quantum well laser and those due to external circuitry and device packaging. Next, Minilase-II is used to demonstrate the highly nonlinear effects of quantum carrier heating, including significant increases in low frequency roll off and differential gain suppressio. Finally, the simulator is used in a preliminary analysis of tunneling injection lasers. The analysis shows that tunneling injection results in less quantum carrier heating. However, the analysis also shows a decrease in the net injection of carriers into the quantum well, which offsets the decreased heating and leads to a a reduction in modulation bandwidth.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Matthew E. Grupen, Matthew E. Grupen, Karl Hess, Karl Hess, } "Hot carrier effects in conventional injection and tunneling injection quantum well laser diodes", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275598; https://doi.org/10.1117/12.275598
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