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6 June 1997 Modeling of master oscillator-power amplifier (MOPA) semiconductor lasers
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Abstract
Monolithically integrated flared amplifier master oscillator power amplifier (MFA-MOPA) semiconductor lasers are studied theoretically using a high resolution computational model which resolved times and longitudinal and transverse space dependencies and includes Lorentzian gain and dispersion spectra. The simulations show that, by altering the linear flare of the power amplifier into a nonlinear, trumpet- shaped flare, the dynamic stability range of the MOPA is increased by a factor of 3. This enables the MOPA to maintain a stable, nearly diffraction limited output beam for higher currents before the onset of transverse instabilities, large beam divergence and facet damage due to filamentation. Thus the MOPA will be able to emit an output beam of significantly higher power and brightness.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter M. W. Skovgaard, John Gerard McInerney, Jerome V. Moloney, Robert A. Indik, and Cun-Zheng Ning "Modeling of master oscillator-power amplifier (MOPA) semiconductor lasers", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275630; https://doi.org/10.1117/12.275630
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