Physical models and numerical simulation of modern semiconductor lasers

Z-.M. Li

doi:10.1117/12.275620

6 June 1997 Physical models and numerical simulation of modern semiconductor lasers

Z-.M. Li

Proceedings Volume 2994, Physics and Simulation of Optoelectronic Devices V; (1997) https://doi.org/10.1117/12.275620
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Simulation of modern semiconductor lasers requires the inclusion of complex physical models as well as sophisticated numerical analysis techniques in 2/3 dimensions. Using DFB lasers and VCSEL's as examples, we describe our physical models for strained quantum wells, spatial hole burning effects, carrier transport, thermal effects, and multiple lateral and longitudinal modes. Numerical approaches used to integrate various physical models are also discussed.

Citation Download Citation

Z-.M. Li "Physical models and numerical simulation of modern semiconductor lasers", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275620

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