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6 June 1997 Physical models and numerical simulation of modern semiconductor lasers
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Abstract
Simulation of modern semiconductor lasers requires the inclusion of complex physical models as well as sophisticated numerical analysis techniques in 2/3 dimensions. Using DFB lasers and VCSEL's as examples, we describe our physical models for strained quantum wells, spatial hole burning effects, carrier transport, thermal effects, and multiple lateral and longitudinal modes. Numerical approaches used to integrate various physical models are also discussed.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z-.M. Li "Physical models and numerical simulation of modern semiconductor lasers", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275620
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