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6 June 1997 Self-assembled visible-bandgap II-VI quantum dots
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Abstract
This paper reports on the self-assembled growth of II-VI semiconductor quantum dots by molecular beam epitaxy. The dots are formed in a highly-strained (Zn,Cd)Se film of only a few monolayer width grown on ZnSe. The formation sets on when the CD mole fraction exceeds 30 percent. We present data on the recombination and relaxation of carriers and excitons in these zero-dimensional structures as well as their interaction with phonons.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Lowisch, Michael Rabe, B. Stegemann, and Fritz Henneberger "Self-assembled visible-bandgap II-VI quantum dots", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275576
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