6 June 1997 Simulation of GaInP laser diode structure
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We have simulated the current flow and potential through visible emitting (AlGa)InP quantum well lasers by a self- consistent finite element solution of the current continuity equations and Poisson's equation linked to a state-broadened calculation of recombination and optical gain in the well. We have used this to investigate the influence of the complete device structure, and in particular the p-cladding layers, on the temperature dependence of threshold current and the external differential efficiency. The aim of the paper is to demonstrate the influence of the whole device structure on the characteristics of GaInP lasers.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Blood, Damian Foulger, Peter M. Smowton, Phil A. Mawby, "Simulation of GaInP laser diode structure", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275623; https://doi.org/10.1117/12.275623


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