Simulation of semiconductor quantum well lasers

Muhammad A. Alam; Mark S. Hybertsen; R. Kent Smith; Gene A. Baraff; Mark R. Pinto

doi:10.1117/12.275621

6 June 1997 Simulation of semiconductor quantum well lasers

Muhammad A. Alam, Mark S. Hybertsen, R. Kent Smith, Gene A. Baraff, Mark R. Pinto

Proceedings Volume 2994, Physics and Simulation of Optoelectronic Devices V; (1997) https://doi.org/10.1117/12.275621
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

A 2D bulk and quantum well laser simulation tool, based on the Bell Laboratories electron device simulator PADRE, has been developed. PADRE contains a suite of robust programs for obtaining self-consistent solutions of the Drift Diffusion equations. To this suite has been added programs for calculating the optical intensity inside the laser, the capture and emission rates between bound and free carriers, the interaction between the confined carriers and the optical field, and a set of ne, powerful schemes for obtaining rapid convergence of the nonlinear equations of the model. This paper describes the augmented program in its present form, gives examples of its present abilities and limitations, and discusses some illustrative results to show features of the simulation tool.

Citation Download Citation

Muhammad A. Alam, Mark S. Hybertsen, R. Kent Smith, Gene A. Baraff, and Mark R. Pinto "Simulation of semiconductor quantum well lasers", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275621

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