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6 June 1997 Space-time simulation of high-brightness semiconductor lasers
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Abstract
A full scale simulation model, that resolves the spatio- temporal behavior of competing longitudinal mode and transverse filamentation instabilities in a wide variety of high brightness edge emitter geometries, is presented. The model is highly modular and is built on a first principles microscopic physics basis. The nonlinear optical response function of the semiconductor, computed for specific QW structures, covers the low-density absorption to high density gain saturation regimes. As an illustration of its robustness as a laser design tool, the model is applied to a monolithically integrated flared amplifier master oscillator power amplifier semiconductor laser.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jerome V. Moloney, Robert A. Indik, Cun-Zheng Ning, and Aidan Egan "Space-time simulation of high-brightness semiconductor lasers", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275607
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