6 June 1997 Two coupled semiconductor lasers in transient regime: equivalent circuit analysis
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Abstract
In this paper, the first large-signal circuit model for laterally coupled semiconductor laser structures is presented. The present work gives application to the study of the transient regime of two coupled semiconductor lasers. The model includes both the electrical and optical characteristics of the device. The circuits elements that compose the model can be differentiated in two very different groups: on one hand, we have obtained circuit elements that describe the lasing processes in a single emitter. This elements coincide with already developed models for the single emitter. On the other hand, new circuit elements that account for the coupling terms have appeared. Also, a new variable has been modeled, the phase difference between the emitters. We will test our model by comparing the results obtained with the circuit model with those obtained by direct integration of the rate equations with standard numerical integration methods. Further indications on how to use the same approach with more complex structures will be given.
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Horacio Lamela, Horacio Lamela, Guillermo Carpintero, Guillermo Carpintero, Pablo Acedo, Pablo Acedo, J. A. Garcia, J. A. Garcia, } "Two coupled semiconductor lasers in transient regime: equivalent circuit analysis", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275631; https://doi.org/10.1117/12.275631
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