Paper
6 June 1997 Ultrabroad-bandwidth in-line MQW GaAs/GaAlAs optical intensity modulator
Milson Tadeu Camargo Silva, Carlos Alberto de Francisco
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Abstract
The design and performance of three wavelength-selective optical intensity modulators integrated in-line operating near 860 nm with 8 angstrom separation based on GaAs/GaAlAs multiquantum well is reported. The device utilizes an exchange Bragg resonator embedded in a dissimilar coupled- waveguide structure in its design. Due to its unique design wavelength selectivity is obtained and the modulator presents a modulation region only 16.14 micrometers long yielding an ultrabroad bandwidth of 250 GHz for a waveguide 2.0 micrometers wide at a drive voltage of 3.0 V. In addition, the device exhibits high extinction ratio, 20 dB, low insertion loss, 2.0 dB, small size, 495 micrometers , tuning capability of 2.8 angstrom, which is 35 percent of the wavelength separation among channels, also at 3.0 V, and it is chirp-free. The in- line modulators can also be integrated with lasers, photodetectors, semiconductor optical amplifiers, etc.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Milson Tadeu Camargo Silva and Carlos Alberto de Francisco "Ultrabroad-bandwidth in-line MQW GaAs/GaAlAs optical intensity modulator", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275591
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KEYWORDS
Modulators

Waveguides

Refractive index

Integrated optics

Quantum wells

Modulation

Gallium arsenide

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