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6 June 1997 ZnMgSSe-based laser diodes
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Abstract
We summarize here recent progress in II-VI blue-green semiconductor laser diodes (LDs). ZnMgSSe quaternary alloy, a promising material for the cladding layer, has enabled us to realize a long lifetime exceeding 100h with improvements in the active layer, the electrode, and growth techniques. Studies of degradation have revealed that II-VI LDs degrade not catastrophically, but gradually with enhancement by electron-hole recombination at defect sites.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Noguchi, S. Tomiya, Shun-Lien Chuang, and Akira Ishibashi "ZnMgSSe-based laser diodes", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275553
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