2 May 1997 Er-doped fluoride glass films by MOCVD for waveguide devices
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We report on the growth of erbium doped ZrF4-LaF3- BaF2 glass films by metalorganic chemical vapor deposition (MOCVD) for the construction of planar waveguide devices. Our process provides the growth of high quality, uniform in thickness, and continuous films on a wide variety of common substrates. A protective layer of MgF2 was deposited in-situ onto the Er-doped glass films under the same CVD deposition conditions. The luminescence of Er around 1.55 micrometers was observed in films on all the substrates used. The emission line shapes are the same as those observed from Er-doped fluorozirconate glass. MOCVD proved to be a feasible technology to grow rare-earth doped fluoride films for planar waveguide devices.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chia-Yen Li, Chia-Yen Li, Vladimir Fuflyigin, Vladimir Fuflyigin, Jing Zhao, Jing Zhao, Xuesheng Chen, Xuesheng Chen, Seppo Honkanen, Seppo Honkanen, Nasser Peyghambarian, Nasser Peyghambarian, } "Er-doped fluoride glass films by MOCVD for waveguide devices", Proc. SPIE 2996, Rare-Earth-Doped Devices, (2 May 1997); doi: 10.1117/12.271145; https://doi.org/10.1117/12.271145

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