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2 May 1997 Er-induced Ga-Al interdiffusion in GaAs/AlGaAs quantum structures
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Erbium was introduce into GaAs/AlGaAs quantum well structures in the process of growth by MBE in an attempt to enhance semiconductor-Er transfer by means of a resonance between quantum well and Er ion transitions. Instead the quantum well was washed out by efficient interdiffusion of Ga and Al and diffusion of Er. We have demonstrated also that erbium interacts with aluminum in arsenides; this interaction leads to the formation of Er-containing Al- enriched clusters.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric K. Lindmark, John P. Prineas, Galina Khitrova, Hyatt M. Gibbs, Oleg B. Gusev, Boris J. Ber, Mikhail S. Bresler, Irina N. Yassievich, B. P. Zakharchenya, and V. F. Masterov "Er-induced Ga-Al interdiffusion in GaAs/AlGaAs quantum structures", Proc. SPIE 2996, Rare-Earth-Doped Devices, (2 May 1997);

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