23 January 1997 High-power InAsSb/InAsSbP laser diodes emitting at 3- to 5-um range
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Proceedings Volume 2997, Integrated Optics Devices: Potential for Commercialization; (1997); doi: 10.1117/12.264148
Event: Photonics West '97, 1997, San Jose, CA, United States
We report metalorganic chemical vapor deposition-grown double heterostructure and multiple quantum well InAsSb/InAsSbP laser diodes emitting at 3 to 4 micrometers and light emitting diodes up to 5 micrometers . Maximum output power up to 1 W was obtained from a MQW laser with stripe width of 100 micrometers and cavity length of 700 micrometers for emitting wavelength of 3.6 micrometers at 90 K. Maximum operating temperature up to 220 K with threshold current density of 40 A/cm2 at 78K were achieved from the double- heterostructure lasers emitting at 3.2 micrometers . The far-field beam divergence as narrow as 24 degrees was achieved with the sue of higher energy gap barrier layers, i.e., lower effective refractive index, in MQW active region. We also discuss the effect of composition-fluctuation in the InAsSb active region on the gain and threshold current of the lasers.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manijeh Razeghi, Jacqueline E. Diaz, Hyuk Jong Yi, D. Wu, B. Lane, Adam Rybaltowski, Y. H. Xiao, Harry Jeon, "High-power InAsSb/InAsSbP laser diodes emitting at 3- to 5-um range", Proc. SPIE 2997, Integrated Optics Devices: Potential for Commercialization, (23 January 1997); doi: 10.1117/12.264148; https://doi.org/10.1117/12.264148

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