23 January 1997 Numerical simulation of a/uc-Si:H p-i-n photodiode under nonuniform illumination: a 2D transport problem
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Abstract
We report here about a computer simulation program, based on a comprehensive physical and numerical model of an a/(mu) c- Si:H p-i-n device, applied to the 2D problem of describing the transport properties within the structure under non- uniform illumination. The continuity equations for holes and electrons together with Poisson's equation are solved simultaneously along the two directions parallel and perpendicular to the junction. The basic semiconductor equations are implemented with a recombination mechanism reflecting the microcrystalline structure of the different layers. The lateral effects occurring within the structure, due to the non-uniformity of the radiation are outlined. The simulation results obtained for different wavelengths of the incident light are compared and shown their dependence on the energy of the radiation. The results of simulating a p- i-n (mu) c-Si:H junctions under non-uniform illumination is that the generated lateral effects depend not only in intensity but also in direction on the wavelength of the incident radiation.
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Alessandro Fantoni, Manuela Vieira, J. Cruz, Rodrigo Martins, "Numerical simulation of a/uc-Si:H p-i-n photodiode under nonuniform illumination: a 2D transport problem", Proc. SPIE 2997, Integrated Optics Devices: Potential for Commercialization, (23 January 1997); doi: 10.1117/12.264153; https://doi.org/10.1117/12.264153
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