23 January 1997 Optical control of millimeter-wave performance of photosensitive heterojunction DDRs in MITATT mode
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Proceedings Volume 2997, Integrated Optics Devices: Potential for Commercialization; (1997); doi: 10.1117/12.264131
Event: Photonics West '97, 1997, San Jose, CA, United States
Abstract
Optically sensitive binary, ternary and quaternary materials are now being explored for formation of heterojunctions which are capable to produce mm-waves MITATT mode. The source of saturation current injection can be excited by optical phonon radiation of suitable energy, which in turn can enhance the saturation current leading to the drop in carrier multiplication factor across the active zone of the p-n junction. The optical radiation at the edges of the depletion zone thus can affect the microwave performance of the homostructure/heterostructure DDRs. The authors have undertaken computer aided studies on optical control of mm- wave performance of several heterojunction DDRs, which can find application for optical detection/communication system. Heterojunctions of different base material like GaAs and InP are designed with the ternary material GaInAs to generate mm-waves with microwave frequencies centered around an window frequency of 94 GHz. The result have also ben compared with those of corresponding homostructure double drift diodes. The DDRs have been analyzed considering drift and tunnel current in MITATT mode. A double iterative computer method has been used to study the effect of optical injection on device properties of both homostructure and heterostructure DDR. The results indicate that the rf power output decreases with optical injection, which enables the DDR to be used as an optical detector.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shankar P. Pati, S. Satpathy, G. N. Dash, A. K. Panda, "Optical control of millimeter-wave performance of photosensitive heterojunction DDRs in MITATT mode", Proc. SPIE 2997, Integrated Optics Devices: Potential for Commercialization, (23 January 1997); doi: 10.1117/12.264131; https://doi.org/10.1117/12.264131
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KEYWORDS
Heterojunctions

Diodes

Gallium arsenide

Microwave radiation

Resistance

Ionization

Sensors

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