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23 January 1997 Modification of the properties of silica glasses by ion implantation
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High energy MeV ion implantation of fused silica and Ge- doped silica renders these materials photosensitive. The physical processes involved are closely related to the photosensitization of Ge-doped silica by UV irradiation but present certain characteristics that are different. We discuss the results of studied of the induced absorption and refractive index changes under different preparation conditions, annealing sequences and subsequent bleaching by ArF and KrF excimer radiation. We include the results of a study using positron annihilation spectroscopy of the defects introduced by ion implantation and subsequent annealing and bleaching.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John L. Brebner, Louis B. Allard, Marc Verhaegen, Mourad Essid, Jacques Albert, Peter Simpson, and Andrew P. Knights "Modification of the properties of silica glasses by ion implantation", Proc. SPIE 2998, Photosensitive Optical Materials and Devices, (23 January 1997);

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