23 January 1997 Near-UV photosensitivity of Ge-doped silica fibers
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Abstract
We report for the first time the refractive index grating side-writing in 10 mol.% GeO2-doped fiber by near-UV light of cw Ar+-laser (333 - 364 nm). The magnitude of induced index change as large as 1.9 multiplied by 10-4 at 1.7 multiplied by 105 W/cm2 UV power density has been achieved. The observed gratings have exhibited the same temperature stability as gratings written by KrF excimer laser (248 nm).
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Eugeni M. Dianov, Eugeni M. Dianov, Dmitry S. Starodubov, Dmitry S. Starodubov, Sergei A. Vasiliev, Sergei A. Vasiliev, Artem A. Frolov, Artem A. Frolov, Oleg I. Medvedkov, Oleg I. Medvedkov, } "Near-UV photosensitivity of Ge-doped silica fibers", Proc. SPIE 2998, Photosensitive Optical Materials and Devices, (23 January 1997); doi: 10.1117/12.264177; https://doi.org/10.1117/12.264177
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