23 January 1997 Photoelectroluminescent electric field intensity sensor
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Abstract
The possibility of using electroluminescent semiconductors of the II-VI group to be used in the construction of the electric field intensity sensors is discussed. The idea of contact-free method of the electric field intensity measurement is based on the influence of electric field on optical properties of electroluminescent ZnS:Mn and ZnS+CdS:Mn semiconductors. The sensors presented do not belong to the group of intensity sensors. These luminescent fiber optic sensors are going to be applied in the future in high voltage electric equipment.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tadeusz Pustelny, Tadeusz Pustelny, } "Photoelectroluminescent electric field intensity sensor", Proc. SPIE 2998, Photosensitive Optical Materials and Devices, (23 January 1997); doi: 10.1117/12.264198; https://doi.org/10.1117/12.264198
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