23 January 1997 Photoelectroluminescent electric field intensity sensor
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Abstract
The possibility of using electroluminescent semiconductors of the II-VI group to be used in the construction of the electric field intensity sensors is discussed. The idea of contact-free method of the electric field intensity measurement is based on the influence of electric field on optical properties of electroluminescent ZnS:Mn and ZnS+CdS:Mn semiconductors. The sensors presented do not belong to the group of intensity sensors. These luminescent fiber optic sensors are going to be applied in the future in high voltage electric equipment.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tadeusz Pustelny, "Photoelectroluminescent electric field intensity sensor", Proc. SPIE 2998, Photosensitive Optical Materials and Devices, (23 January 1997); doi: 10.1117/12.264198; https://doi.org/10.1117/12.264198
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