AlGaN ultraviolet detectors

Manijeh Razeghi; Antoni Rogalski

doi:10.1117/12.271196

15 April 1997 AlGaN ultraviolet detectors

Manijeh Razeghi, Antoni Rogalski

Proceedings Volume 2999, Photodetectors: Materials and Devices II; (1997) https://doi.org/10.1117/12.271196
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Hitherto, the semiconductor ultraviolet (UV) detectors have been mainly fabricated using Si. Industries such as the aerospace, automotive, petroleum, and others have continuously provided the impetus pushing the development of fringe technologies which are tolerant of increasingly high temperatures and hostile environments. As a result, the main efforts are currently directed to anew generation of UV detectors fabricated from wide-band-gap semiconductors between them the most promising are diamond and AlGaN. The latest progress in development of AlGaN UV detectors is described in detail.

Citation Download Citation

Manijeh Razeghi and Antoni Rogalski "AlGaN ultraviolet detectors", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); https://doi.org/10.1117/12.271196

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