15 April 1997 Can coupling with remote conduction bands cause a sufficient normal-incidence absorption in n-type direct-gap semiconductor quantum wells?
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Abstract
Surprisingly, several experiments have reported that normal- incidence light absorption due to inter-conduction-subband transitions in direct-gap semiconductor quantum wells is a s strong as in-plane-incidence absorption.In contrast to other models, a recent theoretical study claimed that a 14-band k.p model including multiband coupling terms due to remote- conduction bands is able to explain the experimental results. In the percent work, a concise formulation extends the model beyond 14 bands. Nevertheless, after re-deriving the optical transition matrix elements, this analysis clearly shows that the oscillator strength for the in-plane polarized optical intersubband transition due to the multiband coupling effects is much smaller than the oscillator strength for the normal-to-plane polarized optical intersubband transition. These results indicate that the multiband coupling effects due to remote-conduction bands cannot cause a sufficient in-plane polarized optical intersubband transition to produce the observed normal- incidence absorption in the desirable n-type III-V compound semiconductor quantum wells.
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Rui Q. Yang, Rui Q. Yang, } "Can coupling with remote conduction bands cause a sufficient normal-incidence absorption in n-type direct-gap semiconductor quantum wells?", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); doi: 10.1117/12.271186; https://doi.org/10.1117/12.271186
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