15 April 1997 Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substrates
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Abstract
We have been presented crystallographic growth models of GaN thin films on the (alpha) -Al2O3 substrates based on the crystal chemistry: electronegativity, chemical bonds, Pouling's rules in the background of mineralogy. We have introduced an extended atomic distance mismatch in crystal growth models and reported epitaxial growth models and reported epitaxial growth model with edge-type dislocation and bridge-type model growing with some roots contacting with substrates. In this paper, we presented growth models of GaN on Si substrates for an example of crystallographic growth model of thin film and discussed the growth conditions of different hexagonal and cubic phases. Crystal chemistry should have been performed effectively on the same aspects of epitaxial growth.
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Hitoshi Ohsato, Manijeh Razeghi, "Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substrates", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); doi: 10.1117/12.271199; https://doi.org/10.1117/12.271199
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