15 April 1997 High-quantum-efficiency 2.2-um InGaAs MOCVD photodiodes
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Abstract
Photodiodes responding in the 0.8-2.3 micrometers wavelength range are of interest in a wide range of applications, from wind- shear detection systems which use eyesafe 2.1 micrometers lasers to differential absorption LIDAR aerosol measurements of CO2. In this paper, we report on uncooled, broadband, 2.25 micrometers lattice-mismatched 0.55eV In0.72Ga0.28As photodiode arrays, in which the cutoff wavelength has been 'extended' from the 1.65 micrometers which is standard for 0.74eV In0.53Ga0.47As lattice-matched to InP wafers. InxGa1-xAs step-grading layers were used to transition from the InP wafer to the final In0.72Ga0.28As photodiode material during the metal organic chemical vapor deposition epitaxial growth. Linear 64 X 1 photodiode arrays were made with an independently-verified external quantum efficiency above 50 percent from 0.8 to 2.2 micrometers using MgF2/ZnS dual layer antireflection coating. Average 300 degree K area-normalized dark current for these N/P diodes was 5 X 10-5 A/cm2 at 10mV reverse bias.
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Steven Wojtczuk, Steven Wojtczuk, Peter C. Colter, Peter C. Colter, Murzy D. Jhabvala, Murzy D. Jhabvala, } "High-quantum-efficiency 2.2-um InGaAs MOCVD photodiodes", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); doi: 10.1117/12.271191; https://doi.org/10.1117/12.271191
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