15 April 1997 InP photodetectors for millimeter wave applications based on edge-coupled heterojunction phototransistors
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Abstract
In this paper, we present first experimental results obtained on two and three tenninal edge-coupled InPfInGaAs heterojunction phototransistors showing that these devices seem very promising for microwave and millimeter wave applications. Keywords : phototransistor , heterojunction, edge-coupled, microwave, millimeter wave, GaInAS/InP, photodetector
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Jerome Van de Casteele, Vincent Magnin, Jean-Philippe Gouy, Jean-Pierre Vilcot, Joseph Harari, Sophie Maricot, and Didier J. Decoster "InP photodetectors for millimeter wave applications based on edge-coupled heterojunction phototransistors", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); doi: 10.1117/12.271188; https://doi.org/10.1117/12.271188
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