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15 April 1997 Intrinsic AlxGa1-xN photodetectors for the entire compositional range
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Abstract
AlxGa1-x ultraviolet photoconductors with cut- off wavelengths from 365 nm to 200 nm have been fabricated and characterized. Various characteristics of the devices, such as photoresponse, voltage-dependent responsivity, frequency-dependent responsivity and noise spectral density, were measured and cross-referenced with optical, electrical and structural characteristics of the material to provide information about the mechanisms taking place during detection. The maximum detectivity reached 5.5 X 108 cm X Hz1/2/W at a modulating frequency of 14 Hz. The effective majority carrier lifetime in AlxGa1-xN materials, derived from frequency-dependent photoconductivity measurements, has been estimated to be from 6 to 35 msec. The frequency-dependent noise-spectrum shows that it is dominated by Johnson-noise at high frequencies for low Al-composition samples.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Danielle Walker, Xiaolong Zhang, Adam W. Saxler, Patrick Kung, Jianren Xu, and Manijeh Razeghi "Intrinsic AlxGa1-xN photodetectors for the entire compositional range", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); https://doi.org/10.1117/12.271200
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