15 April 1997 Nonlinear photoresponse of quantum well infrared photodetectors at high-excitation power
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Abstract
Nonlinear photoresponse effects at high excitation power in quantum well infrared photodetectors (QWIPs) are studied both experimentally and theoretically. The photoconductivity nonlinearity is mainly caused by a redistribution of the electric potential at high power, which leads to a decrease of electric field in the bulk of the QWIP. As a result of the decreased field, the photoexcited electron escape probability and drift velocity decrease, resulting in a decrease of responsivity. These effects are strongly influenced by QWIP structural parameters and operating conditions. In QWIPs with a few QWs the IR power required to observe a decrease of responsivity is much lower than that needed to cause the saturation of the intersubband absorption. Key factors in designing a QWIP with a suppressed nonlinearity are discussed.
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Maxim Ershov, Maxim Ershov, Hui Chun Liu, Hui Chun Liu, Margaret Buchanan, Margaret Buchanan, Zbigniew R. Wasilewski, Zbigniew R. Wasilewski, } "Nonlinear photoresponse of quantum well infrared photodetectors at high-excitation power", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); doi: 10.1117/12.271210; https://doi.org/10.1117/12.271210
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