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15 April 1997 Room-temperature operation of a YBaCuO microbolometer
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Abstract
Linear arrays of 40 X 40 micrometers 2 to 60 X 60 micrometers 2 microbolometers utilizing a semiconducting YBaCuO thin film as the IR sensitive material were fabricated and tested. This material displays a high temperature coefficient of resistance at room temperature, which makes it very attractive as an uncooled IR detector. The compatibility of semiconducting YBaCuO with Si micromachining techniques and CMOS technology and its ease of fabrication into thin films is attractive to the fabrication of inexpensive, high performance infrared detectors and imaging arrays. The room temperature responsivity, Rv, of the detectors was measured using 100 Hz chopped broad band infrared radiation to be as high as 104 V/W at 0.8 (mu) A current bias, providing a detectivity of 107 cm Hz1/2/W. The thermal conductance, G, of the isolation structure was measured to be a relatively high 10-5 W/K which limited the responsivity of the detector. Since Rv varies as 1/G, the responsivity and hence detectivity may be increased by up to two orders of magnitude by improving the thermal isolation. Zero bias responsivity was also observed on the structures, which was interpreted as pyroelectric IR detection. This was confirmed with independent pyroelectric current measurements.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zeynep Celik-Butler, Donald P. Butler, Agha Jahanzeb, John E. Gray, and C.M. Travers "Room-temperature operation of a YBaCuO microbolometer", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); https://doi.org/10.1117/12.271205
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