15 April 1997 Very long wavelength GaAs/GaInP quantum well infrared photodetectors
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Abstract
We demonstrate long wavelength quantum well infrared photodetectors with GaAs quantum wells and GaInP barriers grown using gas-source molecular beam epitaxy. Wafers were grown with varying well widths. The optimum well width was 75 angstrom, which resulted in a detection peak at 13 micrometers and a cutoff wavelength of 15 micrometers . Dark current measurements of the samples with 15 micrometers cutoff wavelength show low dark current densities. The dark current characteristics have been investigated as a function of temperature and electron density in the well and compared to a model which takes into account thermionic emission and thermally assisted tunneling. The model is used to extract a saturation velocity of 1.5 X 105 cm/s for electrons. The photoelectron lifetime before recapture has been deduced from this carrier velocity and photoconductive gain measurements. The lifetime is found to be approximately 5 ps. Preliminary focal plane array imaging is demonstrated.
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Christopher Louis Jelen, Steven Slivken, Gail J. Brown, Manijeh Razeghi, "Very long wavelength GaAs/GaInP quantum well infrared photodetectors", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); doi: 10.1117/12.271184; https://doi.org/10.1117/12.271184
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