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15 April 1997 Wide-spectral response photodetectors based on microcrystalline hydrogenated silicon thin films
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Abstract
Microcrystalline hydrogenated silicon based p-i-n photodiodes with an increased infrared sensitivity have been deposited by a new cyclic CVD method. The microcrystalline deice, when compared to the amorphous counterpart, presents an increased collection efficiency, dependent on bias voltage, in the red and near-infrared spectral region. The shape of the spectral response also depends on the details of the quality of the individual layers, like conductivity and thickness of the p-type contact layer. AS model for the electronic transport of (mu) c-Si:H p-i-n photodetectors is presented and supported by numerical simulation.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manuela Vieira, Alessandro Fantoni, Svetoslav Koynov, and Reinhard Schwarz "Wide-spectral response photodetectors based on microcrystalline hydrogenated silicon thin films", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); https://doi.org/10.1117/12.271189
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