Improvement of avalanche photodetectors through integration of InGaAs and Si

Aaron R. Hawkins; Weishu Wu; John Edward Bowers

doi:10.1117/12.271213

15 April 1997 Improvement of avalanche photodetectors through integration of InGaAs and Si

Aaron R. Hawkins, Weishu Wu, John Edward Bowers

Author Affiliations +

Proceedings Volume 2999, Photodetectors: Materials and Devices II; (1997) https://doi.org/10.1117/12.271213
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Near infrared avalanche photodetectors have been constructed by wafer fusing epitaxial layers of InGaAs to Si. This integration combines the light absorption properties of InGaAs with the avalanche multiplication properties of Si. We concentrate here on two of the advantages these detectors have: desirable gain sensitivity properties, and high gain- bandwidth-products which would make them ideal for optical communication applications. Measurements are shown that illustrate very gradual gain increases with increasing device voltages as well as gain-bandwidth-products of over 300 GHz.

Citation Download Citation

Aaron R. Hawkins, Weishu Wu, and John Edward Bowers "Improvement of avalanche photodetectors through integration of InGaAs and Si", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); https://doi.org/10.1117/12.271213

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